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      N-type silicon wafers

      • Established process, N-type high-efficiency technology

      • Advanced equipment, boosting cost reduction and efficiency improvement

      • 6S lean management, ensuring excellent quality

      • Large size, slicing, low silicon consumption, high efficiency, and available for customization

      • Minority carrier lifetime：≥1000us

      • Resistivity：0.3-2.1Ω.cm

      • Carbon content：≤0.5×1017atoms/cm3

      • Oxygen content：≤6.0×1017atoms/cm3

      Dimension

      Material Properties

      ItemSpecificationTesting method
      Growth mode CZ /
      Crystal orientation ＜100＞±3° X-ray diffraction method
      Conductivity type N type P/N tester
      Dislocations density/cm² ≤500 X-ray diffractometer (ASTM F26-1987)
      Item Growth mode
      Specification CZ
      Testing method /
      Item Crystal orientation
      Specification ＜100＞±3°
      Testing method X-ray diffraction method
      Item Conductivity type
      Specification N type
      Testing method P/N tester
      Item Dislocations density/cm²
      Specification ≤500
      Testing method X-ray diffractometer (ASTM F26-1987)

      Electrical Properties

      ItemSpecificationTesting method
      Oxygen content ≤6.0×1017atoms/cm3 Fourier transform infrared spectrometer
      Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer
      Resistivity 0.3-2.1Ω.cm Automatic silicon wafer detection equipment
      Minority carrier lifetime ≥1000us Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method, Transient photoconductance decay method (with injection level: 1E15 cm-3)
      Item Oxygen content
      Specification ≤6.0×1017atoms/cm3
      Testing method Fourier transform infrared spectrometer
      Item Carbon content
      Specification ≤0.5×1017atoms/cm3
      Testing method Fourier transform infrared spectrometer
      Item Resistivity
      Specification 0.3-2.1Ω.cm
      Testing method Automatic silicon wafer detection equipment
      Item Minority carrier lifetime
      Specification ≥1000us
      Testing method Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method, Transient photoconductance decay method (with injection level: 1E15 cm-3)

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